savantic semiconductor product specification silicon pnp power transistors BDV64/64a/64b/64c description with to-3pn package complement to type bdv65/65a/65b/65c darlington high dc current gain applications for use in general purpose amplifier applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit BDV64 -60 BDV64a -80 BDV64b -100 v cbo collector-base voltage BDV64c open emitter -120 v BDV64 -60 BDV64a -80 BDV64b -100 v ceo collector-emitter voltage BDV64c open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i cm collector current-peak -15 a i b base current -0.5 a t c =25 125 p c collector power dissipation t a =25 3.5 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors BDV64/64a/64b/64c characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BDV64 -60 BDV64a -80 BDV64b -100 v (br)ceo collector-emitter breakdown voltage BDV64c i c =-30ma, i b =0 -120 v v cesat collector-emitter saturation voltage i c =-5a ,i b =-20ma -2.0 v v be base-emitter on voltage i c =-5a ; v ce =-4v -2.5 v BDV64 v cb =-60v, i e =0 v cb =-30v, i e =0;t c =150 -0.4 -2.0 BDV64a v cb =-80v, i e =0 v cb =-40v, i e =0;t c =150 -0.4 -2.0 BDV64b v cb =-100v, i e =0 v cb =-50v, i e =0;t c =150 -0.4 -2.0 i cbo collector cut-off current BDV64c v cb =-120v, i e =0 v cb =-60v, i e =0;t c =150 -0.4 -2.0 ma BDV64 v ce =-30v, i b =0 BDV64a v ce =-40v, i b =0 BDV64b v ce =-50v, i b =0 i ceo collector cut-off current BDV64c v ce =-60v, i b =0 -2 ma i ebo emitter cut-off current v eb =-5v; i c =0 -5 ma h fe dc current gain i c =-5a ; v ce =-4v 1000 v ec diode forward voltage i e =-10a -3.5 v thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.0 /w
savantic semiconductor product specification 3 silicon pnp power transistors BDV64/64a/64b/64c package outline fig.2 outline dimensions(unindicated tolerance: 0.1mm)
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